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  • Chem Sci Trans., 2015, 4(2),  pp 312-314  

    DOI:10.7598/cst2015.1032

    Research Article

    Morphology Study of Si Surface Topography Irradiated by Ar Ion Beam Sputtering

  • HONGMEI BI, YING LIANG* and BO WANG
  • Science Department, Heilongjiang Bayi Agricultural University, China
  • Abstract

    In this paper, Si crystal (000) surface was bombarded by Ar ion beam, with the energy of 90 KeV and the irradiating time of 10 min. In the process of irradiation, there were bulges on the surface of Si crystal surface, the highest of which reached 100 nm. The information of roughness (such as change in level, angle and etc.) were studied by AFM, TEM, SEM and Raman

    Keywords

    Silicon, Ar ion beam, Roughness

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