Cerium doped ZnS nanoparticles were prepared by chemical route. The particle size was determined from the x-ray line broadening. Samples were characterized by XRD, FTIR and UV and SEM. The composition was verified by EDAX spectrum. The size of the particles increased as the annealing temperature was increased. The crystallite size varied from 21.7 nm to 25 nm as the calcination temperature increased. Band gap values Ce3+ doped ZnS were determined to 3.86 eV from the optical transmission studies of the as-prepared samples and exhibited a redshift towards 320 nm in comparison with undoped ZnS nanoparticles. The redshift of the absorption edge to the longer wavelength side has been attributed to the strong exchange interaction between the d electron of Ce and s and p electron of the ZnS host band.
Semiconductor, Nanomaterial, Doping, Ultrasonic velocity