| DUBLIN | CORE | METADATA ITEM | METADATA FOR THIS DOCUMENT |
| 1 | Title | Title of Document | Morphology Study of Si Surface Topography Irradiated by
Ar Ion Beam Sputtering |
| 2 | Creator | Author's name, affiliation, country | HONGMEI BI, YING LIANG* and BO WANG
Science Department, Heilongjiang Bayi Agricultural University, China |
| 3 | Subject | Dicipline(s) | Chemical Science |
| 3 | Subject | Keywords | Silicon, Ar ion beam, Roughness |
| 4 | Description | Abstract | In this paper, Si crystal (000) surface was bombarded by Ar ion beam, with the energy of 90 KeV and the irradiating time of 10 min. In the process of irradiation, there were bulges on the surface of Si crystal surface, the highest of which reached 100 nm. The information of roughness (such as change in level, angle and etc.) were studied by AFM, TEM, SEM and Raman |
| 5 | Publishers | Organizing agency, location | WWW Publications, India |
| 6 | Contributor | Sponsor(s) | - |
| 7 | Date | Date (YYYY-MM-DD) | - |
| 8 | Type | Status & genre | Peer-reviewed Article |
| 8 | Type | Type | |
| 9 | Formate | File Formate | PDF |
| 10 | Identifier | Uniform Resource Identifier | Click Here |
| 10 | Identifier | Digital Object Identifier | |
| 11 | Source | Journal/conference title; vol., no. (Year) | Chemical Science Transactions, Volume 4 , Number (2), (2015) |
| 12 | Lanuguage | English=en | en |
| 13 | Relation | Supp.files | |
| 14 | Coverage | | - |
| 15 | Copyright | Copyright and permissions | |
